• K4F6E3S4HM-MGCJ,K4F6E3S4HM-MGCJ,OTOMO
  • K4F6E3S4HM-MGCJ,K4F6E3S4HM-MGCJ,OTOMO

K4F6E3S4HM-MGCJ

K4F6E3S4HM-MGCJ is a 16Gb (2GB) LPDDR4 SDRAM chip from Samsung, boasting 3733Mbps data rate, x32 organization, triple voltage system (1.8V/1.1V/1.1V) and 200-pin FBGA package. Featuring low power consumption and industrial temperature range, it's ideal for industrial control, IoT gateways, automotive infotainment and consumer electronics.
  • K4F6E3S4HM-MGCJ,K4F6E3S4HM-MGCJ,OTOMO

Description

K4F6E3S4HM-MGCJ

Introduction

K4F6E3S4HM-MGCJ is a high-performance low-power LPDDR4 SDRAM chip launched by Samsung Electronics, belonging to the K4F6E3S4HM product group of the LPDDR4 seriesSamsung Semiconductor Global. It adopts advanced 10nm process technology, featuring a data transfer rate of up to 3733Mbps (LPDDR4-3733) and a x32-bit memory organization (512M × 32) with 8 banks and dual channels for high-bandwidth data processingSamsung Semiconductor Global. The chip operates with a triple voltage system (VDD1: 1.8V, VDD2/VDDQ: 1.1V) for optimized power efficiency, and is packaged in a 200-pin FBGA (10×15mm) with an operating temperature range of -25°C to +85°CSamsung Semiconductor Global. It is ideal for embedded application scenarios requiring high-speed memory access, low power consumption and compact design such as industrial automation controllers, IoT gateways, smart medical devices, automotive infotainment systems and high-end consumer electronics.

Key Features

  • High-speed LPDDR4 architecture: 16Gb (2GB) capacity with 512M × 32 organization, 8 banks and dual channels for maximum bandwidth utilizationSamsung Semiconductor Global
  • Data transfer performance: up to 3733Mbps (LPDDR4-3733) data rate with 1.866GHz clock frequency for seamless multitasking and high-throughput applications
  • Advanced process technology: 10nm-class manufacturing process for improved performance, power efficiency and thermal management
  • Triple voltage system: VDD1 (1.8V) for I/O, VDD2/VDDQ (1.1V) for core operations, reducing overall power consumption by up to 20% compared to previous generations
  • Low-power design: supports multiple power-saving modes (including deep power-down) for extended battery life in portable devices
  • High-reliability features: built-in ECC (Error Correction Code) support for data integrity, and industrial-grade temperature tolerance (-25°C to +85°C)Samsung Semiconductor Global
  • Compact form factor: 200-pin FBGA package (10×15mm) enabling space-efficient PCB layouts in slim and compact devices
  • Read-while-write capability: dual-bank architecture allows simultaneous read and write operations for improved system responsiveness
  • RoHS compliant: lead-free and halogen-free packaging meeting environmental protection standards
  • Product status: EOL (End of Life) - discontinued by Samsung, but still available through authorized distributorsSamsung Semiconductor Global

Typical Applications

  • Industrial automation controllers and PLCs requiring high-speed data processing and multitasking capabilities
  • IoT gateways and edge computing nodes with high-bandwidth sensor data acquisition and real-time analytics
  • Smart medical devices (portable diagnostic instruments, patient monitoring systems) requiring low power consumption and reliable memory performance
  • Automotive infotainment systems, ADAS (Advanced Driver Assistance Systems) and vehicle control units (VCUs)
  • High-end consumer electronics (smartphones, tablets, VR/AR devices, ultra-thin laptops) with slim design requirements
  • Digital signage and human-machine interface (HMI) systems with high-resolution graphics rendering needs
  • Communication equipment (routers, switches, 5G base stations) requiring high-speed memory access for packet processing
  • Embedded vision systems and image processing modules with large data throughput requirements
  • Battery-powered portable devices (wearables, handheld scanners, industrial field devices) needing optimized power efficiency
  • Smart home appliances and hubs with multimedia processing capabilities and compact form factors
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