K4F6E3S4HM-MGCJ is a 16Gb (2GB) LPDDR4 SDRAM chip from Samsung, boasting 3733Mbps data rate, x32 organization, triple voltage system (1.8V/1.1V/1.1V) and 200-pin FBGA package. Featuring low power consumption and industrial temperature range, it's ideal for industrial control, IoT gateways, automotive infotainment and consumer electronics.
K4F6E3S4HM-MGCJ is a high-performance low-power LPDDR4 SDRAM chip launched by Samsung Electronics, belonging to the K4F6E3S4HM product group of the LPDDR4 seriesSamsung Semiconductor Global. It adopts advanced 10nm process technology, featuring a data transfer rate of up to 3733Mbps (LPDDR4-3733) and a x32-bit memory organization (512M × 32) with 8 banks and dual channels for high-bandwidth data processingSamsung Semiconductor Global. The chip operates with a triple voltage system (VDD1: 1.8V, VDD2/VDDQ: 1.1V) for optimized power efficiency, and is packaged in a 200-pin FBGA (10×15mm) with an operating temperature range of -25°C to +85°CSamsung Semiconductor Global. It is ideal for embedded application scenarios requiring high-speed memory access, low power consumption and compact design such as industrial automation controllers, IoT gateways, smart medical devices, automotive infotainment systems and high-end consumer electronics.
Key Features
High-speed LPDDR4 architecture: 16Gb (2GB) capacity with 512M × 32 organization, 8 banks and dual channels for maximum bandwidth utilizationSamsung Semiconductor Global
Data transfer performance: up to 3733Mbps (LPDDR4-3733) data rate with 1.866GHz clock frequency for seamless multitasking and high-throughput applications
Advanced process technology: 10nm-class manufacturing process for improved performance, power efficiency and thermal management
Triple voltage system: VDD1 (1.8V) for I/O, VDD2/VDDQ (1.1V) for core operations, reducing overall power consumption by up to 20% compared to previous generations
Low-power design: supports multiple power-saving modes (including deep power-down) for extended battery life in portable devices
High-reliability features: built-in ECC (Error Correction Code) support for data integrity, and industrial-grade temperature tolerance (-25°C to +85°C)Samsung Semiconductor Global
Compact form factor: 200-pin FBGA package (10×15mm) enabling space-efficient PCB layouts in slim and compact devices
Read-while-write capability: dual-bank architecture allows simultaneous read and write operations for improved system responsiveness
RoHS compliant: lead-free and halogen-free packaging meeting environmental protection standards
Product status: EOL (End of Life) - discontinued by Samsung, but still available through authorized distributorsSamsung Semiconductor Global
Typical Applications
Industrial automation controllers and PLCs requiring high-speed data processing and multitasking capabilities
IoT gateways and edge computing nodes with high-bandwidth sensor data acquisition and real-time analytics
Smart medical devices (portable diagnostic instruments, patient monitoring systems) requiring low power consumption and reliable memory performance
Automotive infotainment systems, ADAS (Advanced Driver Assistance Systems) and vehicle control units (VCUs)