Focus on Electric Meters & Industrial Control, fully compatible with international mainstream models. FRAM penetration rate reaches 80%–90% in new domestic smart electric meters, completely replacing traditional EEPROM solutions. Top manufacturers consume millions to tens of millions of units annually.

Compatible with SPI / I2C Interfaces (Mainstream for Electric Meters)

SPI Interface (Mainstream for Electric Meters)

Smart Memories PN	Capacity	Voltage	Frequency	Package	Infineon/Cypress PN	Fujitsu PN
SF25C04	4Kbit	2.7–5.5V	20MHz	SOP8	FM25L04B-G	MB85RS04
SF25C16	16Kbit	2.7–5.5V	20MHz	SOP8	FM25L16B-G	MB85RS16
SF25C64	64Kbit	2.7–3.6V	25MHz	SOP8	FM25CL64B-G	MB85RS64
SF25C128	128Kbit	2.7–3.6V	25MHz	SOP8	FM25V01A-G	MB85RS128B
SF25C256	256Kbit	2.7–3.6V	25MHz	SOP8	FM25V02A-G	MB85RS256B
SF25C512	512Kbit	2.7–3.6V	25MHz	SOP8	FM25V05-G	MB85RS512T
SF25C10	1Mbit	2.7–3.6V	25MHz	SOP8	FM25V10-G	MB85RS1MT
SF25C20	2Mbit	2.7–3.6V	25MHz	SOP8	FM25V20-G	MB85RS2MT

I2C Interface

Smart Memories PN	Capacity	Voltage	Frequency	Package	Infineon/Cypress PN	Fujitsu PN
SF24C04	4Kbit	2.7–5.5V	400kHz	SOP8	FM24L04B-G	MB85RC04V
SF24C16	16Kbit	2.7–5.5V	400kHz	SOP8	FM24V01-G	MB85RC16V
SF24C64	64Kbit	2.7–3.6V	400kHz	SOP8	FM24V05-G	MB85RC64V
SF24C128	128Kbit	2.7–3.6V	400kHz	SOP8	FM24V01A-G	MB85RC128A
SF24C256	256Kbit	2.7–3.6V	400kHz	SOP8	FM24V02A-G	MB85RC256V
SF24C512	512Kbit	2.7–3.6V	400kHz	SOP8	FM24V05A-G	MB85RC512T

Smart Memories FRAM Products | OTOMO Authorized Distributor

Specialized in energy meter applications, perfectly replacing Fujitsu, ROHM, and Infineon/Cypress FRAM solutions

About OTOMO & Smart Memories FRAM

As a leading authorized distributor of Smart Memories FRAM (Ferroelectric RAM) products, OTOMO focuses on delivering high-performance, reliable non-volatile memory solutions for the energy meter industry. Our SPI FRAM and I2C FRAM products are designed to be direct drop-in replacements for Fujitsu, ROHM, and Infineon/Cypress components, ensuring seamless integration and long-term supply stability for your projects.

SPI FRAM Products

Smart Memories SPI FRAM offers high-speed operation (25MHz) and wide temperature range options, making it ideal for industrial and energy meter applications. All models are available in SOP8 packaging with a 2.7-3.6V operating voltage.

Key Alternative Models:

256Kb SPI FRAM: Replaces Fujitsu MB85RS256A / MB85RS256BPNF-G-JNERE1, ROHM MR45V256AMAZAAT-L, Infineon/Cypress FM25V02A-G(TR) → Alternative Model: SF25C256
512Kb SPI FRAM: Replaces Fujitsu MB85RS512A / MB85RS512TPNF-G-JNE1 / MB85RS512TPNF-G-JNERE1, KAGA MB85RS512TPNF-G-JNERE1, Infineon/Cypress FM25V05-G / FM25V05-GTR → Alternative Model: SF25C512

Part Number	Density	Operating Frequency	Operating Temperature	Operating Voltage	Package Type
SF25C20	2Mbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C10	1Mbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C512	512Kbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C256	256Kbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C128	128Kbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C128-C	128Kbit	25MHz	-25 to 60°C	2.7-3.6V	SOP8
SF25C64	64Kbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C64-C	64Kbit	25MHz	-25 to 60°C	2.7-3.6V	SOP8
SF25C32	32Kbit	25MHz	-40 to 85°C	2.7-3.6V	SOP8
SF25C32-C	32Kbit	25MHz	-25 to 60°C	2.7-3.6V	SOP8

* "-C" suffix indicates commercial temperature range (-25 to 60°C), while standard models support industrial temperature range (-40 to 85°C).

I2C FRAM Products

Smart Memories I2C FRAM features a 1MHz operating frequency and a wide 1.7-5.5V voltage range, offering flexibility for various low-power applications. All models are available in SOP8 packaging with industrial temperature support.

Part Number	Density	Operating Frequency	Operating Temperature	Operating Voltage	Package Type
SF24C20	2Mbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8
SF24C10	1Mbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8
SF24C512	512Kbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8
SF24C256	256Kbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8
SF24C128	128Kbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8
SF24C64	64Kbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8
SF24C32	32Kbit	1MHz	-40 to 85°C	1.7-5.5V	SOP8

FRAM (Ferroelectric RAM) Applications & Product Overview | OTOMO

FRAM (Ferroelectric Random Access Memory) - Applications & Product Overview

1. Core Characteristics of FRAM

FRAM is a non-volatile memory that combines the fast read/write capability of DRAM with the power-off data retention feature of ROM. Its core advantages include:

High-speed Read/Write: Writing speed is far superior to EEPROM and flash memory, with direct data overwriting without erasure.
Ultra-high Durability: Read/write cycles up to 10 trillion times (10¹³), 10 million times that of EEPROM.
Low Power Consumption: No boost circuit required for writing, 92% lower power consumption than EEPROM, ideal for battery-powered devices.
Radiation Resistance: Data unaffected by magnetic interference, suitable for harsh environments.
Non-volatility: Data retained after power loss, no battery backup required.

2. Main Application Fields of FRAM

2.1 Automotive Electronics

Application Scenarios:

TPMS: Real-time pressure/temperature monitoring
BMS: Battery status & fault recording (125°C)
Drive Recorder: Power failure data protection
Instrument Cluster: Non-volatile data storage

Product Examples: Fujitsu MB85RS1MT, MB85RC1MT

Alternative: SMART MEMORIES SF25C10

2.2 Industrial Control

Application Scenarios:

Industrial Robots: 3D position data recording
CNC Units: Processing parameter storage
Encoders: High-speed rotation count recording
Smart Infrastructure: Critical data protection

Product Examples: Fujitsu MB85R256, MB85RS256

Alternative: SMART MEMORIES SF24C256

2.3 Medical Electronics

Application Scenarios:

Patient Monitors: Vital signs data recording
CT Scanners: Position & parameter storage
Insulin Pumps: Injection data logging
Hearing Aids: Low-power parameter storage

Product Examples: Fujitsu MB85RC64, MB85RS2MT

Alternative: SF24C64, SF25C20

2.4 Energy Meters

Application Scenarios:

Electricity Meters: Real-time consumption recording
Prepaid Meters: High-frequency data writing
Water/Gas Meters: Usage data storage
Smart Meters: Remote reading data protection

Product Examples: Fujitsu MB85RS256, MB85RC128

Alternative: SMART MEMORIES SF25C256

2.5 IoT & Edge Computing

Application Scenarios:

5G Base Stations: High-durability data logging
Edge Devices: Sensor data rewriting
Smart Grid: Fault information recording
IoT Sensors: Low-power data storage

Key Requirement: High read/write endurance & low power

2.6 Consumer & Enterprise

Application Scenarios:

Smart Watches: GPS data & low-power operation
UAVs: Flight data recorder storage
POS/ATMs: Transaction history protection
Game Consoles: Critical data recording

Key Feature: Power failure data integrity

3. Recommended FRAM Products

3.1 Fujitsu (RAMXEED)

Product Line: Covering SPI, I2C, parallel interfaces (4Kbit to 8Mbit).
Technology Upgrades:
- Quad SPI (50MHz operating frequency)
- 125°C automotive-grade high-temperature models
- 16Mbit/32Mbit via stacked die technology
Application Cases:
- 4.4B+ units shipped globally, 53M+ in China
- Dominant in energy meters, automotive, medical

3.2 SMART MEMORIES Alternatives

SF25C20, SF25C10, SF25C512, SF25C256, SF25C128, SF25C128-C, SF25C64, SF25C64-C, SF25C32, SF25C32-C

4. Future Trends of FRAM

Large Capacity: Stacked die technology for industrial control requirements

High Speed: 35ns access speed to compete with MRAM/SRAM

Integration: RTC + watchdog + FRAM for better system reliability

New Markets: FA, RAID controllers, FPGA program storage

NOR Flash vs EEPROM vs FRAM | Non-Volatile Memory Comparison | OTOMO

NOR Flash vs EEPROM vs FRAM

Comprehensive Comparison of Non-Volatile Memory Technologies for Embedded Systems

NOR Flash

Definition & Characteristics

NOR Flash is a non-volatile flash memory technology that supports eXecute In Place (XIP) functionality. This allows the CPU to directly read and execute code from NOR Flash without copying it to RAM. It features random access capability for fast reading of data from any address, with fast read speeds but relatively slow write and erase speeds.

Working Principle

NOR Flash is based on floating-gate transistors, using quantum tunneling effect to achieve data erasure and writing. Erase operations must be performed in blocks, while programming (writing) operations can be done by byte or word.

Application Scenarios

NOR Flash is commonly used to store boot code (such as BIOS, Bootloader), operating system kernels and other code that needs direct execution in embedded systems. Its XIP capability provides advantages in scenarios requiring fast startup and execution.

Advantages

Supports XIP functionality
Fast read speed
Strong random access capability

Disadvantages

Slow write and erase speeds
Relatively small capacity
Higher cost

EEPROM

Definition & Characteristics

EEPROM (Electrically Erasable Programmable Read-Only Memory) is an electrically erasable programmable read-only memory that allows byte-level erasure and writing with high flexibility. EEPROM has a high number of erase/write cycles and long lifespan.

Working Principle

EEPROM is also based on floating-gate transistors, using quantum tunneling effect for data erasure and writing. Each byte has an independent control circuit, enabling precise addressing and erasure/writing.

Application Scenarios

EEPROM is commonly used to store small amounts of frequently updated data such as device configuration parameters and calibration data. Its byte-level erasure and writing capability makes it advantageous in scenarios requiring frequent updates of small data sets.

Advantages

Byte-level erasure and writing (high flexibility)
High number of erase/write cycles
Long operational lifespan

Disadvantages

Slow read/write speeds (especially write/erase)
Typically small capacity
Higher cost

FRAM

Definition & Characteristics

FRAM (Ferroelectric Random Access Memory) is a ferroelectric random access memory that combines the advantages of RAM and ROM. FRAM features non-volatility, high-speed read/write, low power consumption and high durability.

Working Principle

FRAM uses the polarization characteristics of ferroelectric materials to store data, maintaining data without refresh circuits. FRAM has extremely fast read/write speeds with no latency in write operations and no waiting for internal chip programming completion.

Application Scenarios

FRAM is suitable for scenarios requiring high-speed read/write, low power consumption and high durability, such as data logging, smart cards, RFID tags, industrial control systems, and energy meter applications.

Advantages

Fast read/write speeds with no latency
Low power consumption
High durability (extensive erase/write cycles)
Non-volatile storage

Disadvantages

Relatively smaller capacity (constantly increasing)
Slightly higher price compared to EEPROM/NOR Flash

Key Feature Comparison Table

Feature	NOR Flash	EEPROM	FRAM
Read Speed	Fast	Slow	Very Fast
Write Speed	Slow	Very Slow	Very Fast
Erase Speed	Slow (Block-level)	Slow (Byte-level)	Very Fast (No latency)
Erase/Write Cycles	100,000 - 1,000,000	1,000,000 - 10,000,000	>10^12 (Ultra high)
Power Consumption	Moderate	High (during write/erase)	Very Low
XIP Support	Yes	No	Yes
Byte-level Operation	Read only	Yes (read/write/erase)	Yes (all operations)
Non-volatility	Yes	Yes	Yes (no refresh needed)
Best For	Boot code, OS kernels	Small configuration data	High-speed data logging, energy meters, industrial control

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